M C Xu, H F Ma, W Ji, B Yang and H J Gao1
Nanoscale Physics and Device Laboratory, Institute of Physics, Chinese Academy of Sciences
DOI:10.1088/0957-4484/17/17/021 Publication Date: 14 Aug 2006
Ge growth on a Si(111)-7 × 7 surface at room temperature was studied by in situ scanning tunnelling microscopy. The Ge hexagonal meshwork film composed of Ge nanoclusters located on the centre of the half-unit-cells of Si(111)-7 × 7 grows in the 'monolayer mode': the first layer is 0.22 nm thick, and then increases in thickness by 0.11 nm, forming the 0.33 nm bilayer. This growth mode leads to a simple stacking sequence. However, the Stranski–Krastanov growth mode was still found for the thick meshwork films.