Surface & Interface Modeling
for Emerging Nanomaterials and Devices

Growth of Ge hexagonal meshwork films on Si(111)-7x7

M C Xu, H F Ma, W Ji, B Yang and H J Gao1

Nanoscale Physics and Device Laboratory, Institute of Physics, Chinese Academy of Sciences

DOI:10.1088/0957-4484/17/17/021    Publication Date: 14 Aug 2006


Ge growth on a Si(111)-7 × 7 surface at room temperature was studied by in situ scanning tunnelling microscopy. The Ge hexagonal meshwork film composed of Ge nanoclusters located on the centre of the half-unit-cells of Si(111)-7 × 7 grows in the 'monolayer mode': the first layer is 0.22 nm thick, and then increases in thickness by 0.11 nm, forming the 0.33 nm bilayer. This growth mode leads to a simple stacking sequence. However, the Stranski–Krastanov growth mode was still found for the thick meshwork films.


View: Nanotechnology  17, 4413 (2006)     Local Copy

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