Jesse Maassen1, Wei Ji1,2, and Hong Guo1
1Department of Physics, Centre for the Physics of Materials, McGill University, Montreal, Quebec H3A 2T8, Canada
2Department of Physics, Renmin University of China, Beijing 100872, People's Republic of China
DOI: Publication Date: 5 Oct 2010
We report first principles investigations of the nonequilibrium transport properties of a Cu(111)∣graphene interface. The Cu(111) electrode is found to induce a transmission minimum (TM) located −0.68 eV below the Fermi level, a feature originating from the Cu-induced charge transfer resulting in n-type doped graphene with the Dirac point coinciding with the TM. An applied bias voltage shifts the n-graphene TM relative to the pure graphene TM and leads to a distinctive peak in the differential conductance indicating the doping level, a characteristic not observed in pure graphene.