Surface & Interface Modeling
for Emerging Nanomaterials and Devices

Atomic-Scale Origin of Long-Term Stability and High Performance of p-GaN Nanowire Arrays for Photocatalytic Overall Pure Water Splitting

Md Golam Kibria1, Ruimin Qiao2, Wanli Yang2, Idris Boukahil3, Xianghua Kong4,5, Faqrul Alam Chowdhury1, Michel L. Trudeau6, Wei Ji5, Hong Guo4, F. J. Himpsel3,*, Lionel Vayssieres7,* and Zetian Mi1,*

1 Department of Electrical & Computer Engineering, McGill University, Montreal, QC, Canada
2 Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
3 Department of Physics, University of Wisconsin Madison, Madison, WI, USA
4 Department of Physics, McGill University, Montreal, QC, Canada
5 Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing, P. R. China
6 Science des Matériaux, IREQ, Hydro-Québec, Varennes, QC, Canada
7 International Research Center for Renewable Energy, School of Energy & Power Engineering, Xi'an Jiaotong University, Xi'an, P. R. ChinA


DOI:10.1002/adma.201602274    Publication Date: 27 July 2016


Atomic-scale origin of the unusually high performance and long-term stability of wurtzite p-GaN oriented nanowire arrays is revealed. Nitrogen termination of both the polar inline image top face and the nonpolar inline image side faces of the nanowires is essential for long-term stability and high efficiency. Such a distinct atomic configuration ensures not only stability against (photo) oxidation in air and in water/electrolyte but as importantly provides the necessary overall reverse crystal polarization needed for efficient hole extraction in p-GaN. 


View: Adv. Mater.  28, 8388–8397 (2016)    

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