Surface & Interface Modeling
for Emerging Nanomaterials and Devices

Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers

Z Mi1, S Zhao1, S Y Woo2, M Bugnet2, M Djavid1, X Liu1, J Kang1,3, X Kong4,5, W Ji5, H Guo4, Z Liu3 and G A Botton2

1 Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada
2 Department of Materials Science and Engineering, Canadian Centre for Electron Microscopy, McMaster University, 1280 Main Street West, Hamilton, ON L8S 4M1, Canada
3 Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
4 Department of Physics, McGill University, 3600 University Street, Montreal, Quebec H3A 2T8, Canada
5 Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing 100872, People's Republic of China

DOI:10.1088/0022-3727/49/36/364006    Publication Date: 


We report on the detailed molecular beam epitaxial growth and characterization of Al(Ga)N nanowire heterostructures on Si and their applications for deep ultraviolet light emitting diodes and lasers. The nanowires are formed under nitrogen-rich conditions without using any metal catalyst. Compared to conventional epilayers, Mg-dopant incorporation is significantly enhanced in nearly strain- and defect-free Al(Ga)N nanowire structures, leading to efficient p-type conduction. The resulting Al(Ga)N nanowire LEDs exhibit excellent performance, including a turn-on voltage of ~5.5 V for an AlN nanowire LED operating at 207 nm. The design, fabrication, and performance of an electrically injected AlGaN nanowire laser operating in the UV-B band is also presented.


View: J. Phys. D: Appl. Phys.  49, 36 (2016)    

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