Surface & Interface Modeling
for Emerging Nanomaterials and Devices

High-Electron-Mobility and Air-Stable 2D Layered PtSe2 FETs

Y. Zhao, J. Qiao, Z. Yu, P. Yu, K. Xu, S. P. Lau, W. Zhou, Z. Liu, X. Wang, W. Ji,* Y. Chai*

Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. ChinaQ1 
Polytechnic University Shenzhen Research Institute, Shenzhen, 518057, P. R. China 
Department of Physics, Renmin University of China, Beijing, 100872, P. R. China 
Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, Renmin University of China, Beijing, 100872, P. R. China 
National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China 
School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore 
Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA

DOI:10.1002/adma.201604230    Publication Date: Nov. 25, 2016


The electrical and optical measurements, in combination with the density functional theory calculations, show distinct layer-dependent semiconductor-tosemimetal evolution of 2D layered PtSe2. The high room-temperature electron mobility and near-infrared photoresponse, together with much better air-stability, make PtSe2 a versatile electronic 2D layered material.


View: Advanced Materials  29, 1604230 (2017)    

Matierlas Views: 具有强层间相互作用和高迁移率的新型贵金属硫属化物

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